Abstract
A sulfur‐annealing treatment was investigated to control the sulfur content of epitaxial CuInS2 films grown on GaAs substrate by PLD. The sulfur‐annealing treatment improved the surface roughness and film crystallinity. Photoluminescence measurements obtained using the confocal microspectroscopy demonstrated that the annealed films show band‐edge emissions over a very large area. Electron‐probe microanalysis measurements indicated that the sulfur content of the annealed films was about 50 at.%, and the content of the emission area was more than 50 at.%. Therefore, the sulfur content of epitaxial CuInS2 films was successfully controlled by the sulfur‐annealing treatment.
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