Abstract
The compositional distribution of ZnSe/BeTe interfaces in ZnSe/BeTe multiple quantum wells with a type-II band alignment has been investigated using cross-sectional scanning tunneling microscopy and X-ray diffraction measurements. The filled- and empty-state images revealed that Zn–Te and Be–Se bonds exist at the ZnSe/BeTe interface within the range of 2–4 monolayers along the growth direction. The transition layer between the ZnSe layer and the BeTe layer is composed of the BeZnSeTe quaternary alloy. X-ray diffraction analysis confirmed the existence of a (ZnTe)0.58(BeSe)0.42 transition layer with a width of 0.40 nm at the ZnSe/BeTe interface.
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