Abstract
Laser assisted doping of GaAs from an Al thin film, deposited on its surface, has been carried out. The unreacted aluminum, left on the irradiated surface, has been removed chemically after the irradiation and the surface of the substrate has been investigated by electron microscope and X-ray diffraction studies. It has been found that when the system Al–GaAs is irradiated with lower laser energy densities, the composition of the solid phase is in the private triangle Al–GaAs–AlAs. When the system Al–GaAs is irradiated with intermediate laser energy densities, the solid phase, which probably consists of Ga x Al 1− x As, has been found. When the system Al–GaAs is irradiated with high laser energy density small amounts of Ga x Al 1− x As are formed in the solid phase. The results are explained on the basis of the thermal annealing model for interaction of laser irradiation with the matter.
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