Abstract
A series of GaN/InxGa1—xN/GaN quantum well structures was investigated by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL). The structures were grown by metal organic chemical vapor deposition on Al2O3(0001) substrates varying only the substrate temperature between 800 and 860 °C for the InGaN growth under otherwise unaltered growth conditions. A strong shift of the PL emission wavelength from 390 to 480 nm is observed. Composition analyses were carried out by measuring local lattice parameters, which are directly related to the local In concentration, from high-resolution TEM lattice fringe images. An increase of the average In concentration from 9% to 18% is found as the growth temperature is lowered. A laterally inhomogeneous In concentration is observed in all samples with inclusions of high In content embedded in a quantum well with lower In concentration indicating that phase separation occurs even at a low average In concentration of 9%.
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