Abstract
The composition dependence of the in-plane conduction band effective mass in strained 15-nm-thick lattice-mismatched Ga1−xInxAs/InP single quantum wells was determined by conventional cyclotron and optically detected cyclotron resonance techniques. Our results are in agreement with a self-consistent calculation taking into account effects due to nonparabolicity, confinement, strain, and finite two-dimensional carrier densities.
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