Abstract
Lead zirconate titanate (PZT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). Lead β-diketonate ( Pb(DPM)2, zirconium t-butoxide ( Zr(OC4H9)4) and titanium i-propoxide ( Ti(OC3H7)4) were used as metalorganic (MO) precursors. Perovskite single-phase PZT films were obtained at temperatures below 500° C when the Pb/(Zr+Ti) concentration ratio was close to 1. The cation concentrations in the PZT films were successfully controlled by adjusting the flow rate of each MO source. The variation in composition and structure with the process temperature and the MO source flow rates was discussed.
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