Abstract
The results on composition control and surface defect study of molecular beam epitaxial (MBE)-grown Hg 1− x Cd x Te are described. In the long wavelength regime, the standard deviation in x values determined by FTIR and ellipsometry measurements was 0.013. Good composition reproducibility was achieved. A variety of surface defects was observed and their origins are discussed. The optimized growth window for obtaining a good morphological surface was determined. By careful efforts in substrates preparation as well as growth control, the averaged density of surface defects (>2 μm) for 2 in 10 μm-thick HgCdTe wafers was determined to be 300 cm −2. LW 256×1 linear focal plane arrays were fabricated on MBE-grown HgCdTe epilayers. An average detectivity D λ ∗ of 3.5×10 10 cm Hz W −1 with a non-uniformity factor of 8.8% was obtained.
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