Abstract
The variation of compositions in ultra-thin Ga x In 1− x As/InP layers grown by chemical beam epitaxy (CBE) was investigated. The Ga atomic content of the grown Ga x In 1− x As was evaluated by an X-ray diffraction method. By comparing with theoretical simulation, we found a lack of Ga content in very thin layer growth. The reduction of Ga content ranged from 0.47 to 0.33 for 4-monolayer superlattice. Our result implies that there are some transition layers at the beginning of Ga x In 1− x As growth which should be eliminated.
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