Composition and physical properties of amorphous bulk and thin film materials in the system GeSeTeAs

Abstract

Bulk samples of GeSe, GeSeAs, GeTe, GeTeAs and SeTeAs have been prepared by quenching from the melt. Densities and degree of crystallinity have been measured. Scanning electron micrographs of glassy GeSe x (1.5 ⩽ x ⩽ 6) and GeSe 5.33As 0.33 show no evidence of gross diphasic structure. Bulk GeSe, GeSe 2 and GeSe 4 have been flash evaporated to form thin films; X-ray fluorescence analyses give film compositions of GeSe 0.7, GeSe 1.6 and GeSe 2.4, respectively. Crystallization temperatures of glassy GeSe 1.5, GeSe 2.4, GeSe 3 and GeSe 4 as determined by thermal analysis are reported. Crystallization of amorphous GeSe 1.5 as a function of heat treatment at 450°C has been determined.