Abstract
Bulk samples of GeSe, GeSeAs, GeTe, GeTeAs and SeTeAs have been prepared by quenching from the melt. Densities and degree of crystallinity have been measured. Scanning electron micrographs of glassy GeSe x (1.5 ⩽ x ⩽ 6) and GeSe 5.33As 0.33 show no evidence of gross diphasic structure. Bulk GeSe, GeSe 2 and GeSe 4 have been flash evaporated to form thin films; X-ray fluorescence analyses give film compositions of GeSe 0.7, GeSe 1.6 and GeSe 2.4, respectively. Crystallization temperatures of glassy GeSe 1.5, GeSe 2.4, GeSe 3 and GeSe 4 as determined by thermal analysis are reported. Crystallization of amorphous GeSe 1.5 as a function of heat treatment at 450°C has been determined.
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