Abstract
Multilayer Al thin films with interleaving and protective MgF2 dielectric layers for use as far and extreme ultraviolet reflectors have been characterized using x‐ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The devices were prepared in a conventional high vacuum system. Sputter depth profiles were obtained using XPS in a separate ultrahigh vacuum system. The MgF2 layers may contain Mg vacancies, and F appeared to be segregated to the MgF2/Al boundaries where it may form AlF3. Oxide regions on the Al surfaces are thicker than previously reported from optical measurements and are not pure Al2O3 throughout. The AFM images showed columnar growth of the Al and MgF2 layers. Root‐mean‐square roughnesses determined across these surfaces were on the order of at least 1–2 nm. A more comprehensive picture of the composition and morphology of each layer in a multilayer device was obtained from this investigation than typically provided from measurements with optical techniques.
Published Version
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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