Abstract
Samples of the composite nanotweezers with shape memory effect were prepared and tested. Proposed design of the nanotweezers made it possible to manipulate individual NbS 3 whiskers in the scanning electron microscopy. To study the transport properties of the charge density wave (CDW), from the array of NbS 3 filaments, structurally perfect crystals of tens of nanometers in width were chosen and transferred to a substrate with electrical conductors without introducing additional structural defects. On the fixed crystals of different length and width, the voltage-current (IV) curves were measured with an external high-frequency electromagnetic field. The manifestation of the Shapiro steps on IV curves is indicative of the high quality of the samples made with the help of the proposed nanotweezers with shape memory effect (SME).
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