Abstract
The results of studies of the properties of composite InGaN/GaN/InAlN heterostructures are reported. It is shown that, in the InAlN layer, there is substantial phase separation that brings about the formation of three-dimensional islands consisting of AlN-InAlN-AlN regions. The dimensions of these islands depend on the thickness of the InAlN layer and the conditions of epitaxial growth. Interruptions in the growth of InAlN provide a means for influencing the structural properties of the InAlN islands. The use of composite InGaN/GaN/InAlN heterostructures, in which the InGaN layer with a high In content serves as the active region in light-emitting diode structures, makes it possible to achieve emission in the yellow-red wavelength range 560–620 nm.
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