Abstract
Self-assembled InAs quantum dots (QDs) on GaAs substrates were grown by metal organic chemical vapor deposition with periodic AsH3 interruption. In contrast to the conventional InAs QD growth method, AsH3 was interrupted periodically while TMIn was introduced into the reactor continuously. By interrupting AsH3 periodically, the growth surface is modulated between As-stabilized surface and In-stabilized one, resulting in complete suppression of relaxed large island formation and significant improvement in photoluminescence intensity. With further optimization of growth parameters, the authors obtained the emission at 1.32μm and narrow linewidth of 32meV at room temperature.
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