Complete spin polarization of electrons in semiconductor layers and quantum dots

Abstract

We demonstrate that nonequilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved if the thin layers or quantum dots are placed between two ferromagnetic metal contacts with moderate spin injection coefficients and antiparallel magnetizations. The sign of the spin polarization is determined by the direction of the current. Applications of this effect in spintronics and quantum information processing are discussed.