Abstract
The advances in CMOS process technology enables the design of analog high frequency circuits for mobile communication products. Low noise amplifiers as well as power amplifiers are required in the RF front end. This work presents a complete and consistent characterisation procedure for power transistors of a standard 0.35 /spl mu/m CMOS technology. With the developed tools for small signal, large signal and noise modelling a full characterisation of the transistor is achieved.
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