Abstract
AbstractThis work shows that an accurate characterization of the nonlinear distortion of a GaAs MESFET, does not allow the common approach of splitting the Ids, (Vds, Vds) current in two voltage‐dependent nonlinear current sources, Gm(Vgs) and Gdx(Vds). It is shown that the cross terms of the Ids Taylor series expansion can give an important contribution to the MESFETs intermodulanon distortion behavior. A laboratory procedure for the complete characterization of that element is given. © 1992 John Wiley & Sons, Inc.
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