Complementary use of organic and oxide semiconductors

Abstract

ABSTRACT Complementary use of p-type organic and n-type oxide semiconductors is presented. First, we demonstrated complementary circuits using low-voltage operating high performance pentacene and amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The field-effect mobilities of the pentacene and a-IGZO transistors are 0.6 and 17.1 cm 2 /V s, respectively at an operating voltage of 10 V. A complementary inverter composed of these transistors exhibits good voltage transfer characteristics with a high gain of ~56. A five-stage ring oscillator with the inverters yields an output frequency of 200 Hz at 10 V, corresponding to a propagation delay of 1 ms. Second, together with the electrical device, we demonstrated an optoelectronic device, light-emitting diodes (LEDs), using organic/oxide hybrid junctions. The hybrid p-n junction LEDs are composed of N ,N ¶-diphenyl- N ,N ¶-bis(1-naphthyl)-1,1 ¶-biphenyl-4,4 ¶-diamine ( . -NPD) and sputtered ZnO. Similar with conventional p-n junction diodes, the hybrid junctio n shows a good current rectification and electroluminescence (EL) under forward bias. We found that the EL bands from the device agree well with the photoluminescence peaks from . -NPD and ZnO, implying the radiative recombination of injected charges occurs in both components of the junction. Keywords: Oxide semiconductors, organic semiconductors , thin-film transistors, light-emitting diodes