Abstract
ABSTRACTElectrical properties of grain boundaries grown by Czochralski process were studied by microwave phase shift (μW-PS) and electron beam induced current (EBIC), before and after gold diffusion at 700°C. As-grown samples had similar doping levels determined by four-point probe measurements but somewhat different oxygen concentrations, obtained by Fourier transform infrared spectroscopy (FTIR). It is shown that the increase of the grain boundary activity due to Au gathering at this planar defect can be hindered by native impurities (likely oxygen). EBIC and μW-PS techniques gave respectively electron diffusion lengths and lifetime values, both in good agreement. EBIC images on deformed Σ =9 showed that extrinsic dislocations do not activate the grain boundary at 300K.
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