Competitive capture of photoexcited carriers in a novel step-graded ln/sub x/(Al/sub 0.17/Ga/sub 0.83/)/sub 1-x/As quantum well heterostructure

Toshiya Tadakuma ,K Fujiwara ,Shinjiro Machida ,Jacob Riis Folkenberg ,Akihiro Satake ,Jørn Märcher Hvam

doi:10.1109/iciprm.2004.1442662

Competitive capture of photoexcited carriers in a novel step-graded ln/sub x/(Al/sub 0.17/Ga/sub 0.83/)/sub 1-x/As quantum well heterostructure

Toshiya Tadakuma , K Fujiwara + Show 4 more

https://doi.org/10.1109/iciprm.2004.1442662

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Publication Date: Jan 1, 2004

Affiliation: Kyushu Institute of Technology, Technical University of Denmark

#Photoluminescence Excitation #Photoluminescence + Show 8 more

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Abstract

Photoluminescence (PL) and PL excitation (PLE) spectra of a novel step-graded strained In/sub x/(Al/sub 0.17/Ga/sub 0.83/)/sub 1-x/As/Al/sub 0.17/Ga/sub 0.83/As multiple-quantum-well heterostructure consisting of five quantum wells with different x values have been investigated. Under indirect barrier excitation conditions a strongly nonuniform PL intensity distribution is observed between the five different wells, while no such difference in PL intensity is found by direct well excitation. PL enhancement and reduction observed for the different wells at the barrier band edge excitation are explained in terms of competitive capture of carriers from the barrier into the five wells.

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