Abstract
We have explored the competing phases in the anisotropically strained manganese oxide with use of a composition-spread thin film where two contrastive ground states, i.e., ferromagnetic metal and charge/orbital-ordered insulator, are designed to compete with a continuous variation in the chemical composition. Taking advantage of a systematic inspection of the phase evolutions, we have confirmed that competing electronic orders could be realized in thin-film form. In particular, we found a possibly one-dimensional orbital-ordered insulating state near the metal-insulator phase boundary which can be disturbed by a relatively low magnetic field.
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