Abstract
Non-dopant ions have been implanted at low doses ([inverted lazy s] 1010 cm−2) into GaAs to determine the extent of carrier removal and to pin-point annealing stages for carrier recovery. A removal rate of around 200 carriers per ion is found for such lighter ions as B+, N+, and F+. At the 1-MeV energy used, compensating damage extends along the ion track right from the GaAs wafer surface. Partial recovery of the carriers as well as mobility occurs at the well-known 225 °C electron damage annealing stage. A further annealing stage is found at [inverted lazy s] 525 °C.
Published Version
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