Abstract
Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.
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