Abstract
It is the aim of this report to show experimental evidence for the compensation effect during water desorption from siloxane-based spin-on dielectrics. A single linear relationship was obtained between the activation entropy ΔS# and the activation enthalpy ΔH# for the elementary water desorption components in the degassing spectra for siloxane-based dielectric thin films. From this observation, an isokinetic temperature was derived at which all desorption rates become equal. It is argued that this temperature can be considered as a fundamental materials characteristic, governing the thermal stability of the dielectric thin film.
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