Abstract
The magnitude of radiative and Auger recombinations in polar InGaN quantum wells is studied. Lifetime measurements show that these two processes are related by a power law as the electron-hole wavefunction overlap varies, leading to a near-compensation of their relative contributions. Theoretical investigation reveals that, in systems with wavefunction separation, recombination rates are controlled by the spatial tails of decaying wavefunctions. Such recombinations observe a general power law whose exponent is determined only by the ratio of the carriers' effective masses. These findings explain why III-nitride emitters remain efficient despite significant wavefunction separation.
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