Compatible integration of radiation detectors and transistors

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Abstract Until recently, smart nuclear radiation detectors were non-existent because of the substantial differences between the detector fabrication process and conventional IC processes. In this paper a fabrication process is presented which allows the compatible integration of both nuclear radiation detectors and (simple) MOSFET s. Test devices were fabricated containing two-dimensional nuclear radiation detectors and both polysilicon-gate and metal-gate PMOS transistors with a variety of geometries. The experimental results of the test devices show that MOS transistors can be monolithically integrated together with nuclear radiation detectors without degrading the detector quality. This opens up the way towards the development of smart nuclear radiation detectors.