Comparison study of optical properties of Si nanostructures: Ion implantation and MACE

Abstract

A comparison study on the optical properties of Silicon nanostructures have been done. Silicon nanostructures are fabricated by two methods: two-stage ion implantation and metal assisted chemical etching. In these methods, Ag ions for two-stage ion implantation and Ag metal as a catalyst for etching has been used. Optical properties of these Silicon nanostructures have been studied using different characterization techniques like Photoluminescence spectroscopy and Raman scattering. XRD measurements are carried out to see the crystallinity of the formed Silicon nanostructures. Surface morphology of etched samples have been studied extensively through SEM images. Etching time are varied and noted down at three different time i.e. 45 minutes, 60 minutes and 75 minutes. Interesting observation in this work is that after a threshold etching time, the formed Silicon nanowires start breaking up and micro-etching takes place with further increase in etching time. These observations are supported by Raman scattering, Photoluminescence results and SEM images. Optical properties of Silicon nanostructures formed in dual ion implantation and etching method (at 45 minutes sample) shows similar behavior. The details of the above are discussed in the presentation.