Abstract
AbstractWe compare InN layers grown directly on c ‐plane (0001) sapphire and on (0001) GaN templates using metal‐organic vapor phase epitaxy. InN grown on nitridated c ‐plane sapphire showed N‐polarity, while InN grown on c ‐plane GaN templates showed In‐polarity. N‐polar and In‐polar InN layers showed different surface morphology and crystallinity. N‐polar InN was smoothest when grown at higher growth temperatures, while In‐polar InN was smoothest at intermediate growth temperatures. Growth mode of the N‐polar InN on sapphire is Frank‐Van der Merwe, while growth mode of the In‐polar InN on GaN templates is Volmer‐Weber. Electrical properties were similar for both layers. Lowtemperature photoluminescence of In‐polar InN layers is shifted to higher energies most likely due to biaxial compressive stresses. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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