Abstract
N- and P-type polycrystalline silicon thin film transistors are fabricated with channel thickness of 30 nm and 100 nm by metal induced lateral crystallization (MILC) and conventional solid-phase crystallization (SPC) of amorphous silicon. Significant improvement is obtained for the MILC devices by ultrathin channel layer. But for SPC devices, improvement is not as significant. The possible reasons are proposed and discussed.
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