Comparison simulation of well-tempered MOSFET's by quantum mechanical and semi-classical approaches

Yutao Ma Yutao Ma,Zhijian Li Zhijian Li,Litian Liu Litian Liu,Lilin Tian Lilin Tian,Lifeng Chen Lifeng Chen

doi:10.1109/icsict.2001.982041

Comparison simulation of well-tempered MOSFET's by quantum mechanical and semi-classical approaches

Yutao Ma Yutao Ma, Zhijian Li Zhijian Li + Show 3 more

https://doi.org/10.1109/icsict.2001.982041

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Publication Date: Oct 22, 2001

Affiliation: Tsinghua University, Institute of Microelectronics

#Quantum Mechanical Approach #Quantum Mechanical Effects + Show 8 more

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Abstract

A newly developed general purpose 2-D device simulator is used to simulate the well-tempered MOSFET's provided by MIT website. In the new simulator the modified Airy function (MAF) method is used in solving the Schrodinger equation. Then 2-D model fully comprising the quantum mechanical effects (QMEs) in the whole channel region by self-consistent solution of Schrodinger, Poisson and carrier continuity equations are developed. The MOSFET's are simulated by both quantum mechanical approach and semi-classical approach. The results show that for ultra-small devices, the output current degradation due to quantum mechanical effects (QMEs) can be very large.

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