Abstract
p-type Zn-doped GaAs layers have been prepared by both liquid-phase (LPE) and vapor-phase (VPE) epitaxial growth techniques. Both techniques allow controlled Zn doping between ∼9×1017 and 3×1019 cm−3. For the LPE technique, the hole concentration (p) is related to the concentration (XZn) in the Ga solution by p=5×1020(XZn)1/2. The surfaces of the LPE layers have a characteristic ripple, in contrast to the optically flat surfaces representative of vapor-grown layers. Minority-carrier (electron) diffusion lengths in the LPE layers decrease from 10 to 5 μm with increasing hole concentrations between 9×1017 and 3×1019 cm−3. Diffusion lengths for comparably doped VPE layers are about two times smaller. The room-temperature photoluminescence characteristics of both types of layers have similar dependences on hole concentration, which can be used as a calibration for nondestructive hole concentration determination. Peak photoluminescence intensities of the two types of layers occur at ∼1×1019 cm−3, and are approximately equal in intensity.
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