Abstract
The Liquid-Phase Epitaxy (LPE) growth technique is based on simple principles and resrs upon simple apparatuses. It is described in Chap. 5. Recently, superlattice devices composed of finer heterostructures have attracted the attention of device researchers because the quantum effects can drastically improve the device characteristics. Fine-structured epitaxy for producing superlattice devices requires thickness controllability of less than several hundred Å, uniformity and heterointerface abruptness. Vapor phase and beam epitaxial growth techniques for fine-structured devices are being intensely studied. This chapter introduces and explains Metal-Organic Chemical Vapor Deposition (MOCVD) and Chemical-Beam Epitaxy (CBE).KeywordsMultiple Quantum WellEffusion CellSubstrate RotationChemical Beam EpitaxyMOCVD SystemThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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