Abstract
Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, in which 0.101121 Ci 63Ni was selected as the beta source. The time-related electrical properties were obtained using Monte Carlo simulations. For the n-type ZnO, the Pt/ZnO Schottky diode had the highest energy conversion efficiency, and the Ni/ZnO Schottky diode had the largest Isc. The overall electrical performance of PN junctions is better than that of Schottky diodes. The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices, coming close to those of PN junctions. Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors, Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.
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