Comparison of three boronization techniques in TdeV

Abstract

Preparation of the internal walls of tokamaks by plasma enhanced chemical vapour deposition (PECVD) of boron containing films has now been implemented on several machines since its development on TEXTOR. More recently, such films were deposited on the internal walls of TdeV using not only this procedure but also two new approaches: solid target boronization (STB) which consisted in inserting a low-density boronized carbon-carbon (C-C) composite into the tokamak plasma and TMB fuelling where trimethylboron was used as fuelling gas during the plasma discharge. These approaches resulted in a rapid shot to shot improvement of important parameters such as the volume averaged resistivity and radiated power over the first dozen shots when the boron source is present. Typically, the resistivity is reduced from ∼4.0×10−7 to ∼2.5×10−7 Ωm, comparable to the resistivity obtained with PECVD. The radiated power relative to the ohmic power is reduced by a factor of 2 from 20 to 10%. When the boron source, present during STB or TMB fuelling, is removed however, these plasma parameters start increasing. Within a few tens of shots, they have reverted to their preconditioning values, a situation which requires hundreds of shots after PECVD.