Abstract
We have studied the dependence of the terrace width of growth spirals on local supersaturation during the growth of on-axis silicon carbide (SiC) crystals. Local supersaturation is adjusted by changing the residual argon gas pressure inside the sublimation growth chamber. Whereas Si-face crystals seem to partly verify the model of Burton, Cabrera and Frank, we found that on C-face crystals, the terrace width is independent of supersaturation. In contrast to previously reported data obtained from KDP crystals, we cannot ascribe our result to hollow-core dislocations or micropipes, as the observed growth spirals arose from independent and closed, unit or double-unit screw dislocations. Besides, we checked that neither the finite growth area nor the influence of the stress field of the dislocation can explain our data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
