Abstract
The retention of 1 to 10 keV xenon and caesium implanted in silicon has been investigated using medium energy backscattering spectrometry. Caesium retention near the surface has been found to be extremely sensitive to the ion-to-oxygen flux density ratio. Even at base pressures of about 10 −6 Pa and current densities of 2 μA/cm 2 the caesium profiles are affected by incorporation of oxygen which causes pile-up of caesium near the surface. At moderate base pressure (∼10 −5 Pa) and low implantation energies the steady state areal density of (oxidized) caesium may be up to an order of magnitude larger than the respective areal density of xenon.
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