Comparison of the interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 on In0.53Ga0.47As

Abstract

This study is a comparison of interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 with those of single layers on an In0.53Ga0.47As substrate. The nanolaminate structure shows better trap minimalization in both trap cases along with lower hysteresis and leakage current density and higher breakdown field than the bilayer structures. X-ray photoelectron spectroscopy (XPS) was used to quantify the microstructural properties, and a combination of XPS and reflected electron energy loss spectrum analysis was used to calculate the bandgap of deposited films. Al incorporation into HfO2 increases the bandgap and band offsets.