Abstract
Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$n$</tex> is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$n$</tex> is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.
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