Abstract
The drift mobility of nonequilibrium holes injected in undoped polycrystalline diamond films was determined, by a transit-time technique, as ca. 10−3 cm2/(V s). This hole mobility is three orders of magnitude lower than the “equilibrium” mobility in boron-doped diamond films [0.1–1 cm2/(V s)], determined from the films' dc conductivity. This difference is explained by the effect of a nonequilibrium charge carrier trapping during the carrier transport in polycrystalline diamond.
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