Abstract
The crystallization behavior of nitrogen-doped Ge2Sb2Te5 (NGST) thin films was examined using a static laser heating method and transmission electron microscopy. Reflectance changes were examined, and the fraction of crystalline phase present was measured on a nanosecond time scale for various laser powers and duration times. A modified laser sequence was employed to determine the crystallization of the melt-quenched amorphous phase. Compared to an as-deposited NGST, the melt-quenched NGST showed a significantly faster crystallization with a shorter incubation time. The microstructures of the melt-quenched NGST systems demonstrated the presence of a number of fine crystalline grains upon crystallization, which is far different from the case of an as-deposited NGST. The findings indicate that the grain size is smaller in the crystallized NGST with a higher nitrogen content in the melt-quenched amorphous films.
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