Comparison of the contribution of different types of interface-optical phonon modes to electron–phonon scattering in a quasi-two-dimensional system

Abstract

Utilizing the operator projection technique, we theoretically study the contribution of different types of optical phonon modes to electron–phonon scattering in a quasi-two-dimensional system through calculating the expression for the magnetophonon resonance absorption power (MPR-AP) caused by scattering between the electrons with interface-optical phonons in parabolic quantum wells (PQWs). Electron interactions with different modes of interface-optical-phonons include the symmetric and antisymmetric modes in both the barrier and well layers together are considered in detail. The full width at half maximum (FWHM) of the resonant peaks due to different interface-optical-phonon modes was measured by using the profile method. Numerical results show that the strength of electron–interface-phonon interaction increases with confining frequency of parabolic confinement potential, temperature, and magnetic field under all antisymmetric- and symmetric-modes in both well and barrier layers. The electron-interaction with symmetric-interface-phonon has stronger strength compared to antisymmetric-interface-phonon in all well and barrier layers. The strongest-electron-scattering for symmetric phonon in well layer, meanwhile weakest that for antisymmetric phonon in barrier layer. At higher value of the photon frequency, the contributions of interface-optical-phonons is not significant. Our present calculations well accord with previous experimental and theoretical studies.