Comparison of the contrast in conventional and lattice resolved ADF STEM images of InGaAs/GaAs structures using different camera lengths

Abstract

A procedure to quantify annular dark field (ADF) images in scanning transmission electron microscopy (STEM) has been applied to two 200kV transmission electron microscopes (TEMs), a JEOL 2010F and a double aberration-corrected JEOL 2200FSC. A series of ADF images is acquired as a function of the camera length (i.e. inner detection angle). Then the intensity ratio of InGaAs and GaAs is plotted vs. camera length and extrapolated to zero, at which point the contrast behaves exactly as predicted by Rutherford's scattering. The linearity of ADF intensity ratio vs. camera length improves significantly by using the JEOL 2200FSC compared to the JEOL 2010F at medium resolution. A high-resolution ADF image at 2MX nominal magnification acquired in the JEOL 2200FSC shows the same linearity of intensity ratio vs. camera length, independent of whether the ratios of the average background intensities or the fringe amplitudes are used for the analysis. This is explained by both group III and group V atoms contributing to the {111} fringes observed, similar to low resolution data.