Comparison of surface vacuum ultraviolet emissions with resonance level number densities. II. Rare-gas plasmas and Ar-molecular gas mixtures

Abstract

Vacuum ultraviolet (VUV) emissions from excited plasma species can play a variety of roles in processing plasmas, including damaging the surface properties of materials used in semiconductor processing. Depending on their wavelength, VUV photons can easily transmit thin upper dielectric layers and affect the electrical characteristics of the devices. Despite their importance, measuring VUV fluxes is complicated by the fact that few materials transmit at VUV wavelengths, and both detectors and windows are easily damaged by plasma exposure. The authors have previously reported on measuring VUV fluxes in pure argon plasmas by monitoring the concentrations of Ar(3p54s) resonance atoms that produce the VUV emissions using noninvasive optical emission spectroscopy in the visible/near-infrared wavelength range [Boffard et al., J. Vac. Sci. Technol., A 32, 021304 (2014)]. Here, the authors extend this technique to other rare-gases (Ne, Kr, and Xe) and argon-molecular gas plasmas (Ar/H2, Ar/O2, and Ar/N2). Results of a model for VUV emissions that couples radiation trapping and the measured rare-gas resonance level densities are compared to measurements made with both a calibrated VUV photodiode and a sodium salicylate fluorescence detection scheme. In these more complicated gas mixtures, VUV emissions from a variety of sources beyond the principal resonance levels of the rare gases are found to contribute to the total VUV flux.