Comparison of sputtering and atomic layer deposition based ultra-thin alumina protective layers for high temperature surface acoustic wave devices

Abstract

Surface acoustic wave (SAW) can be used as passive wireless sensors in high temperature environments. For such applications, protective layers are crucial and important for the SAW sensors. In this paper, ultra-thin Al2O3 layers prepared by atomic layer deposition (ALD) and RF magnetron sputtering were used to protect SAW devices with platinum (Pt) electrodes and their temperature stability was studied systematically. The devices were thermally treated up to 1150 °C in air, the real-time resistance of Pt resistive tracks with a sputtering Al2O3 protective layer showed much better and improved thermal stability than those without or with an ALD Al2O3 protective layer. Microstructure characterizations showed that the superior temperature stability is attributed to its mixture of amorphous and nano-crystalline nature of the Al2O3 layer deposited by sputtering and full recrystallization at high temperatures. SAW devices with a sputtering Al2O3 protective layer after 1150 °C treatment maintained almost unchanged properties, while those with an ALD Al2O3 protective layer failed to work. Investigation also indicated there exists an optimal thickness for the sputtering Al2O3 layer to achieve best performance and thermal-stability for the SAW devices. Besides, the deposition rate of Al2O3 layer by sputtering is 10 times faster than that by ALD. All the results demonstrate that the sputtering Al2O3 protective layer is more suitable for high temperature SAW device applications owing to its lower cost, higher deposition rate and temperature stability.