Comparison of Silicon and Silicon-Tungsten Disulphide Heterojunction Based Tub-type Back Gated MOSFET Using Non-Equilibrium Green’s Function

Abstract

At nanoscale along with the failure of Metal oxide semiconductor field-effect transistor due to short channel effects, Silicon has raised as another bottleneck for researchers. In the last couple of decades, researchers have provided different solutions in the form of Graphene and Transition Metal Dichalcogenides materials. Each Graphene and Transition Metal Dichalcogenides has its own set of disadvantages like poor ION/IOFF ratio and lower carrier mobility and hence cannot be used individually. In this article, a tub type metal oxide semiconductor field-effect transistor is designed and for application of the device in a low power VLSI domain, the back-gated technique is used. Different device properties are studied first with a Silicon-based channel and then a Silicon-Tungsten Disulphide heterojunction channel. The selection of SiO2 as a gate insulator and contact material is also justified. This article shows that instead of using conventional Silicon-based devices it is better to use heterojunction devices, as they offer much lower OFF-state current and better linearity properties.