Abstract
The effect of forward-current stress of the body diode on the operating characteristics of various commercially-available SiC power MOSFETs was compared. The one set of recent-vintage second-generation 1200-V devices studied showed no degradation at all when the body diode was forward conducted—either in the body diode or the MOSFET characteristics. This is a distinct improvement from first generation 1200-V devices from various suppliers. This degradation phenomenon was consistent with the formation of stacking faults during current stress, which typically reduced MOSFET conductivity, and in some devices increased the Off-state leakage current. Although first-generation 1700-V MOSFET characteristics showed no degradation of the body diode, they did experience a degradation of the blocking voltage due to charge trapping during the stress.
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