Abstract
RHEED surface reconstruction patterns were compared in situ on Si-doped AlGaAs grown side by side on (100) and 6° off toward (111)A GaAs substrates. Different RHEED patterns of AlGaAs were observed under certain growth conditions including the so-called “forbidden range”. Studies of surface morphology and low temperature photoluminesence (PL) indicate that growth on 6° off substrates relaxes the constraints on the growth conditions necessary to obtain high quality AlGaAs between 600 and 680°C.
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