Abstract
The molecular-beam epitaxial growth conditions and characteristics of npn and pnp heterojunction bipolar transistors in the InGaAlAs/InGaAs material system are described. Direct-current current gains of more than 15 000 have been obtained for npn heterojunction bipolar transistors (HBTs). pnp HBTs have a larger breakdown voltage compared to equivalent npn HBTs. A novel pnp HBT structure in which a strained hole filter is placed just above the base to inject light holes preferentially is proposed. The high speed performance of pnp HBTs is at present limited by emitter series resistance.
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