Abstract
The envelope method was used to determine optical constants of TiO2 thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were calculated. Optical properties of the TiO2 thin films were strongly dependent on the deposition technology. The TiO2 thin films prepared by magnetron sputtering and electron-beam evaporation methods were established to be indirect band semiconductors with the band gap energies 3.15 and 3.43 eV, respectively.
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