Abstract
Abstract The noise properties of different silicon integrated magnetic-field sensors are presented, namely for the new gated silicon-on-sapphire micromagnetodiode, the lateral bipolar magnetotransistor, the MOS-Hall sensor and the MOS magnetotransistor (MAGFET). The noise sources are identified for each device and the relevant parameters are discussed. The corresponding limits in the detection of a magnetic field are also calculated. From the fact that they are all within flthe 0.1 to 10 μT range for sensors based on different principles, and give very different sensitivities, we suggest that this limit is more or less a characteristic of the semiconductor material (related to its physical parameters).
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