Abstract
This paper presents comparison on the different intrinsic width of InGaAs PIN Photodiode. Intrinsic region is a pure semiconductor without any significant dopant species present. In this paper, it will present two different sizes of the intrinsic region for InGaAs PIN Photodiode. This photodiode will be designed by using Atlas Silvaco TCAD Tools. From the structure, the characteristics of the photodiode will be analyzed. The I-layer thickness (or width) is varied from 5μm × 20μm to 8μm × 20μm in order to investigate its effects on the current-voltage (IV) characteristics. These papers are separated into several sections consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between different intrinsic widths of InGaAs PIN Photodiode.
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